Why base is kept very thin in transistor?
The base region in a transistor is made very thin so that there is a better conduction of majority carriers from emitter to collector through base. The base region in a transistor is doped lightly so that the number density of majority carriers (electrons in p-n and holes in n-p-n transistor) is low.
How many depletion layers are there in transistor?
two depletion regions
Why base current is weaker than collector current?
Explanation: Base is much narrower and thinner than collectors,hence the majority of charge carriers are received by collector. Hence,collector current is greater than base current.
Why is emitter always forward biased?
Emitter is always forward biased w.r.t base so as to supply majority charge carriers to the base.
Is VBE always 0.7 V?
What is V BE of a Transistor? VBE is the voltage that falls between the base and emitter of a bipolar junction transistor. VBE is approximately 0.7V for a silicon transistor. For a germanium transistor (which is more rare), VBE is approximately 0.3V.
Why are collectors reverse biased?
The collector is kept at a higher potential than base or emitter so that the collector can attract all the electrons from emitter in case of a npn transistor as an example. For this to happen the collector base junction is reverse biased.
When a pn junction is reverse biased?
So, when the junction is reverse biased that is when the p side is connected to the negative terminal, and the n side is connected to the positive terminal of the battery, the electrons in the n side will be attracted towards the positive terminal, and the holes in the p side will be attracted towards the negative …
How does current flow in reverse bias?
Reverse bias usually refers to how a diode is used in a circuit. If a diode is reverse biased, the voltage at the cathode is higher than that at the anode. Therefore, no current will flow until the electric field is so high that the diode breaks down.
What is forward and reverse bias of transistor?
In typical operation, the base–emitter junction is forward-biased, which means that the p-doped side of the junction is at a more positive potential than the n-doped side, and the base–collector junction is reverse-biased.